University of California, Los Angeles (UCLA) researchers say they have fabricated the fastest graphene transistors ever using a nanowire as the self-aligned gate. The research, led by UCLA professor Xiangfeng Duan, says the technique overcomes two previous limitations of graphene transistors.
"First, it doesn't produce any appreciable defects in the graphene during fabrication, so the high carrier mobility is retained," Duan says. "Second, by using a self-aligned approach with a nanowire as the gate, the group was able to overcome alignment difficulties previously encountered and fabricate very short-channel devices with unprecedented performance." Their fabrication technique enabled the team to demonstrate graphene-based transistors with a cutoff frequency of up to 300 GHz.
"We are very excited about our approach and the results, and we are currently taking additional efforts to scale up the approach and further boost the speed," says UCLA's Lei Liao.
From UCLA Newsroom
View Full Article
Abstracts Copyright © 2010 Information Inc., Bethesda, Maryland, USA
No entries found