Researchers from Stanford University, the University of Maryland, and Taiwan Semiconductor Manufacturing Co. developed a nanocomposite superlattice phase-change memory device.
The device is made with a new material that allows it to more easily regain its structure when a new bit is written.
The researchers produced 40-nanometer devices that run at 0.7 volts, switch in about 40 nanoseconds, and consume less than 1.5 picojoules of energy, with low resistance drift.
Said Stanford's Asir Intisar Khan, "With switching that low, logic and memory integration are possible."
From IEEE Spectrum
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