Researchers at the Singapore-MIT Alliance for Research and Technology (SMART), which serves as the Massachusetts Institute of Technology's (MIT) research enterprise in Singapore, have developed a commercially viable method to create new silicon III-V chips, a breakthrough that could lead to intelligent optoelectronic and 5G devices.
III-V chips are made from elements such as gallium nitride (GaN) and indium gallium arsenide (InGaAs), compounds well suited for optoelectronics and communications.
The new method involves building two layers of silicon and III-V devices on separate substrates and integrating them vertically together within a micron.
SMART's Kevin Lee said using the new process, "We can leverage existing capabilities to manufacture these integrated Silicon III-V chips cost-effectively and accelerate the development and adoption of new technologies that will power economies."
From Singapore-MIT Alliance for Research and Technology (SMART)
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Abstracts Copyright © 2019 SmithBucklin, Washington, DC, USA
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