Researchers at Korea's Yonsei and Chung-Ang universities have developed a molybdenum disulfide (MoS2) transistor that can be used in bendable OLED displays.
The researchers had to overcome the problem of resistance between the MoS2 and a transistor's source and drain electrodes to create the operational bendable six-by-six-pixel array.
They placed the transistor between two layers of aluminum oxide, instead of on a piece of silicon dioxide. The interface between the two materials enhanced the flow of electrons into the semiconductor, which overcame the resistance, one of the major problems other researchers have faced in trying to create a truly bendable smartphone, television, or other screen-based device.
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