Researchers at Fudan University in China have created a new gate design for transistors using two-dimensional (2D) materials, in a development that could bridge the gap between volatile and non-volatile memory.
The new "quasi-non-volatile" device offers the benefits of static random access memory (SRAM) and dynamic random access memory (DRAM), while aiming to improve DRAM's limited data retention ability and need to be frequently refreshed, as well as SRAM's high cost.
The team used a gate design that has been gaining popularity called semi-floating gate (SFG) memory technology, which is similar to a typical field effect transistor except that SFG transistor can "remember" the applied voltage from the gate.
The team's 2D SFG memory has a refresh time 156 times longer than DRAM, and provides writing operation performance approximately 106 times faster than other memories based on 2D materials.
From IEEE Spectrum
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