Researchers at the Korea Advanced Institute of Science and Technology (KAIST) in South Korea have developed an ultra-flexible organic flash memory.
The new memory device also exhibits a significantly long projected retention rate with a programming voltage that matches current industry standards.
KAIST professors Seunghyup Yoo and Sung Gap Im say the technology can be applied to non-conventional substrates, such as plastics and papers, to demonstrate its feasibility over a wide range of applications.
The researchers utilized thin polymeric insulators grown with initiated chemical vapor deposition (iCVD), a vapor-phase growth technique for polymers.
The researchers found when the iCVD-based polymeric insulators are coupled with rational device design and material choice, they can make a significant contribution to flash memory technology.
"This study well illustrates that even highly flexible flash memory can be made to have a practically viable level of performance, so that it contributes to full-fledged wearable electronic devices and smart electronic paper," Yoo notes.
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