Researchers say innovative electrodes will help make new resistive random access memory (RRAM) technologies compatible with existing circuitry.
A team at the A*STAR Institute of Microelectronics has designed nickel-based electrodes that can couple RRAM to complementary metal-oxide semiconductor (CMOS) systems and reduce the current needed to switch the RRAM between memory states.
The prototype RRAM cells consist of three layers. The researchers used physical vapor deposition to create a bottom electrode of nickel silicide or nickel germanosilicide, before adding a central dielectric switching layer of hafnium oxide, and a final top electrode of titanium nitride. They could quickly and reliably switch the memory state of their cells, using very low operating currents.
"Our electrodes can be easily formed on the source or drain terminal of a transistor," says A*STAR researcher Xin Peng Wang. "In fact, our design effectively uses a CMOS transistor source or drain directly as the bottom electrode in a RRAM cell." Wang also notes this can reduce the total cost and boost scalability.
From A*STAR Research
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