University of California, Riverside researchers have developed technology that could lead to the next generation of memory storage devices for portable electronics such as smartphones, laptops, tablets, and digital cameras.
The technology is based on resistive memory, which can be used to create memory cells that are smaller, operate at a higher speed, and offer more storage capacity than flash memory cells.
"This is a significant step as the electronics industry is considering wide-scale adoption of resistive memory as an alternative for flash memory," says Riverside professor Jianlin Liu. "It really simplifies the process and lowers the fabrication cost."
Liu says resistive memory could be the next step in memory storage devices because it has a simple structure, high-density integration, fast operation, and long endurance.
The researchers self-assembled zinc oxide nano-islands on silicon to create the resistive memory devices. Using a conductive atomic-force microscope, the researchers observed three operation modes from the same device structure, which they say eliminates the need for a separate selector device.
From University of California, Riverside
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